Features low on-resistance of 7 milliohms at 10V and 11 milliohms at 4.5V
Vishay Intertechnology has unveiled a 30-V p-channel TrenchFET Gen III power MOSFET in the PowerPAK 1212-8 package, which features a low on-resistance for a p-channel MOSFET with the voltage rating in the 3.3-mm by 3.3-mm footprint area.
The company said that the new Si7625DN will be used for adaptor, load, and battery switches in notebook computers, netbooks, and industrial/general systems. Its low on-resistance also results in lower voltage drops for load switches up to 24V and hot-swap applications in industrial/general systems.
Vishay said that the new Si7625DN offers low on-resistance of 7 milliohms at 10 V and 11 milliohms at 4.5V. These values are 30 % lower at 10V and 39% lower at 4.5V than the previously leading 30V device in the 3.3-mm by 3.3-mm footprint area. The MOSFET is 100% Rg- and UIS-tested, compliant to RoHS Directive 2002/95/EC, and halogen-free in accordance with IEC 61249-2-21.
The p-channel TrenchFET Gen III packaging options offer designers a choice between the maximum drain current and power dissipation of the PowerPAK SO-8 or the space savings provided by the PowerPAK 1212-8. With a compact 3.3-mm by 3.3-mm footprint, the device offers one-third the footprint area of the PowerPAK SO-8 or SO-8 type packages.
