Vishay Intertechnology has unveiled new thinnest n-channel chipscale power Mosfet 20-V MICRO FOOT Si8800EDB that combines a 0.8-mm by 0.8-mm outline with a height of 0.357 mm.
The company claimed that its Si8800EDB is 36% smaller and 11% thinner than the next smallest n-channel device in a chipscale package. It provides an extremely low on-resistance per area due to its packageless technology and increased die area.
According to Vishay Intertechnology, the Si8800EDB Mosfet offers maximum on-resistance values of 80 milliohms at 4.5 V, 90 milliohms at 2.5 V, 105 milliohms at 1.8 V, and 150 milliohms at 1.5 V.
Typical applications for the new device will include load switches and small signal switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones.
Vishay Intertechnology said that its Si8800EDB features typical ESD protection of 1500 V, is compliant to RoHS Directive 2002/95/EC, and is halogen-free according to the IEC 61249-2-21 Definition.
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