This new manufacturing capability combines two of TriQuint’s previous processes, offering designers one technology to integrate previously incompatible functional blocks onto a single die, reducing part count, saving board space and improving overall system costs.
TQBiHEMT is well suited for highly integrated front end radio modules typically found in wireless applications with high data rates and frequencies. These types of applications require a semiconductor process which allows front end functional blocks to be optimized individually. TQBiHEMT enables the optimal integration of high power amplifiers in HBT on the same die as pHEMT low noise amplifiers and pHEMT switches, while remaining a cost effective design solution.
TriQuint uses its high volume InGaP HBT process, TQHBT3 – designed for high power, high efficiency and linear power amplifiers – in its own handset products used in the world’s most popular mobile phones. Likewise, TriQuint’s InGaAs E/D pHEMT process, TQPED, is utilized to make high isolation switches and low noise amplifiers for the handset and wireless data markets. The TQBiHEMT process, an innovative combination of these two processes, enables the creation of single chip products, incorporating the best possible power amplifiers and switch low noise amplifier components.
Glen Riley, vice president and general manager of commercial foundry at TriQuint, said: The demand for 3G, 4G wireless and other high frequency wireless applications is growing and our customers look to us to help them tap into this burgeoning market. The introduction of the TQBiHEMT process demonstrates TriQuint’s commitment to our customer success through the delivery of innovative technology at a competitive price point relative to discrete solutions.
