Japanese electronics maker Toshiba has developed a spin transfer torque magnetoresistive random access memory (STT-MRAM) element which the company claims can cut power consumption of mobile processors by two-thirds.
The company said that its new MRAM can be used in smartphones as cache memory for mobile processors, replacing the SRAM.
The new memory element is claimed to reduce power consumption by 90% using elements below 30nm and overcomes the operating trade-off by securing improved speed.
According to the company, the introduction of the newly designed normally-off memory circuit with no passes for current to leak into cuts leak current to zero in both operation and standby without any specific power supply management.
The company added that it expects to bring the new memory element to STT-MRAM cache memory in the future for mobile processors integrated into smartphones and tablet PCs.
Toshiba said it the new STT-MRAM is based on magnetic materials and could be an alternative to SRAM because it is non-volatile, cutting leak current during standby mode.
In July this year, Toshiba had said that it will cut production of its flash memory chips, used to store data in mobile gadgets, by around 30% to adjust excess inventory resulted due to oversupply and sliding prices.
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Toshiba, in June 2012, has developed a low-power, many-core System-on-a-Chip (SoC) for embedded applications used in areas such as digital consumer products and automotive products.
