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February 22, 2010

Samsung unveils 40nm 4GB DDR3 modules

Plans to migrate more than 90% of its DDR DRAM production to 40nm-class process technology

By CBR Staff Writer

Samsung Electronics said that it has started the mass production of 4GB DDR3 devices using 40 nanometer (nm) class process technology. The company plans to migrate more than 90% of its DDR DRAM production to 40nm-class process technology.

The company claims that the green DDR3 is optimised to enhance energy-efficiency ratings for servers seeking to comply with or exceed new Energy Star power consumption specifications. The production of the 4Gb DDR3 raises the amount of memory for use in servers to 32GB per module, which is twice the maximum density achieved with modules based on 2Gb components.

According to Samsung, the new 40nm-class 4Gb DDR3-based module consumes 36W, which represents about 83% savings over the 60nm-class 1Gb DDR2 module. By applying the new 40nm 4Gb DDR3-based modules to existing server systems, DRAM density can raised at least two-fold.

In addition, it also raises the small outline dual inline memory module (SoDIMM) density to 8GB, enabling a system level density of up to 16GB for two socket modes or 32GB for four socket models.

Dong-Soo Jun, executive vice president of memory marketing at Samsung Electronics said: “When our 40nm-class DDR3 was first introduced last July, we were well ahead of the curve for high density, high performance DDR3.

“Now, in just seven more months, we have introduced an ultra-low power ‘Green Memory’ – the 4Gb DDR3, which is double the density of its predecessor. At a module density of 16-gigabyte (GB), the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs.”

Available memory modules include 16GB and 32GB RDIMMs and 8GB SoDIMMs with a 1.6Gbps performance rate.

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