Samsung Electronics has unveiled 32GB load-reduced, dual-inline memory module (LRDIMM), for server applications.
The company claims that the new 32GB LRDIMM which is developed using 40nm-class, 4Gb DDR3 chips, accommodates next generation servers designed for virtualisation, cloud computing and other high-capacity applications.
According to Samsung, 32GB LRDIMM prototype which comes equipped with 72 4Gb DDR3 chips and an additional memory buffer chip enables to reduce the load on the memory subsystem by as much as 75%.
Samsung claims that the 32GB LRDIMMs, memory capacity can rise up to 384GB per CPU. In a two-way server system, capacity can be increased up to 768GB, or about 1.5 times that of a 512GB server system equipped with 32GB DDR3 RDIMMs.
In addition, a server equipped with LRDIMMs can process data at 1,333Mbps, approximately 70% faster than the previous speed of 800 Mbps. LRDIMMs operate at 1.35 or 1.5 volts, according to the company.
Dong Jun, executive vice president of memory marketing at Samsung Electronics, said: "In developing the industry’s first load-reduced module with 40nm-class DDR3 technology, we are underscoring our determination to combine the best of capacity and performance for the newest generation of servers."
The company said that it will begin mass producing the 32GB LRDIMM in the second half of this year.
