Expanding on the announcement that members IBM Corp and AT&T Co have donated the designs and technology of their 4M-bit memory chip and fast 64K-bit static RAM respectively, (CI No 854), the Sematech consortium says that each part uses minimum photolithographic dimensions in approximately the 0.7 micron range and use different process sequences in their construction: the AT&T part is of the six-transistor cell and uses process technology also designed for making logic chips, microprocessors and ASICs, while the IBM part, which will find its way into IBM products later this year, uses a modular process architecture that can also be used for statics and logic chips; the two parts will enable Sematech to establish a demonstration capability that will facilitate its transition to Phase II of its programme, targeted at 0.5 micron geometries.
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