Hyundai Electronics and NEC Corp are readying ferroelectric random access memory (FeRAM) chips, for what is expected to be an initial wave of FeRAM production at the end of this year and into 1999 (CI No 3,362), the Korea Times reports. Hyundai claims that its new 256Kb chip is smaller than current FeRAMs and has lower power consumption. Meanwhile, NEC Corp has developed a prototype integrated FeRAM and CPU smart card controller, according to Semiconductor International. FeRAM technology, which was invented by Ramtron International Corp (CI No 3,364) is thought to be ideal for integrated circuit cards, electronic cash applications and non-contact cards because it is near infinitely rewritable and uses low amounts of power. The transition from the production of DRAM chips to FeRAM and Flash memory is likely to be more marked following the slump in the worldwide DRAM market, because FeRAM and Flash chips and modules offer a higher return for manufacturers. Matsushita Electric Co Ltd and Fujitsu Ltd have already announced that they intend to go into mass production of FeRAMs from the end of this year (CI No 3,362). The global FeRAM market is expected to be worth $23.5bn by 2010.
