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SAMSUNG READIES 64M-BIT FLASH MEMORY CHIP

Samsung Semiconductor Inc, San Jose claims its KM29V64000T is the world’s first single-cell 64M-bit NAND Flash memory device. The KM29V64000T has what the company calls a gapless read feature to provide 50nS serial page access to eliminates NAND latency time in sequential read operations, so a page needs to be loaded only once at five microseconds with all subsequent pages being read at 50nS. It runs from a single 3.3V supply, draws about 50 microAmps in standby mode, it takes typically 200 microseconds to write 528 bytes with a block erase time of 4mS. The part is sampling now with full production set for late next quarter, and it costs $64 a time when you order 10,000-up.

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