Samsung has commenced mass production of 8 GB DDR4 memory and 32 GB module that are considered to be the most advanced technologies in the industry.
The memory and the module are manufactured on a new 20-nanometer (nm) process technology.
The 8 GB DDR4 will be an addition to the 20nm-based DRAM line -up which includes 20nm 6 GB LPDDR3 for mobile devices and 20nm 4 GB DDR3 for PCs.
The smartphone maker started producing the 32GB registered dual in-line memory module (RDIMM) using the 8 GB DDR4.
With data transfer rate per pin up to 2,400 Mbps, the 32GB module has 29% performance increase when compared to the 1,866 Mbps bandwidth of a DDR3 server module.
By applying 3D through silicon via (TSV) technology, the 8 GB chip can also be used for the production of server modules with capacity up to 128GB.
Samsung Electronics Memory Marketing vice president Jeeho Baek said: "Our new 20nm 8Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers.
"By expanding the production of our 20nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market."
The new DDR4 is expected to improve error correction features of servers.
