According to Samsung, the Universal Flash Storage (UFS) 2.0 interface has one of the most advanced next-generation flash memory storage specifications in the world, which is also JEDEC-compliant.
The Universal Flash Storage (UFS) 2.0 interface is likely to become standard for Samsung’s next-generation smartphones.
The new UFS based memory chip will have higher data processing speeds when compared to 8-bit parallel-interface-based eMMC standards, due to the usage of Command Queue, which increases the speed of command execution in SSDs.
For random reading, the chip can conduct 19,000 input/output operations per second (IOPS) which, according to Samsung is 2.7 times faster than the common embedded memory found in present day high-end smartphones.
The random read speed of the UFS is 12 times faster than the currently available high-speed memory cards that usually run at 1,500 IOPS.
The chip consumes 50% less energy and is capable of providing a sequential read and write performance boost, that can go up to SSD levels.
When compared to conventional external memory card, the new UFS embedded memory is also capable of providing 28 times faster random writing speed; which helps support smooth Ultra HD video playback and easy multitasking functions.
Samsung Electronics Memory Marketing SVP Jee-ho Baek said: "With our mass production of ultra-fast UFS memory of the industry’s highest capacity, we are making a significant contribution to enable a more advanced mobile experience for consumers.
"In the future, we will increase the proportion of high-capacity memory solutions, in leading the continued growth of the premium memory market."
