Samsung Electronics, a provider of advanced memory technology, has developed 1 gigabit (Gb) mobile DRAM with a wide I/O interface, using 50 nanometer class process technology, which will be used in mobile applications including smartphones and tablet PCs.
The new 1Gb wide I/O mobile DRAM can transmit data at 12.8 gigabyte (GB) per second, which increases the bandwidth of mobile DDR DRAM (1.6GB/s) eightfold, while reducing power consumption by approximately 87%, the company said.
In addition, to enhance data transmission, the new offering uses 512 pins for data input and output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins.
Samsung Electronics memory product planning and application engineering senior vice president Byungse So said following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, their new mobile DRAM offering with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products.
