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December 15, 2011

ON Semiconductor introduces new trench-based low forward voltage Schottky rectifiers family

Provides low forward voltage drop and reduced leakage current

By CBR Staff Writer

ON Semiconductor has introduced a new family of 100 volt (V) trench-based low forward voltage Schottky rectifiers (LVFR) for applications such as switching power supplies for notebook adapters or flat panel displays, reverse battery protection circuits and high frequency DC-DC converters.

The new NTST30100CTG, NTST20100CTG and NTSB20U100CTG family of devices utilise a trench topology that enables low forward voltage drop and reduced leakage current which results in low conduction losses and a substantial improvement in circuit efficiency.

With trench MOS structure, the LVFR family enables an enhanced conduction zone under forward bias, resulting in significant reduction in forward voltage drop. Under reverse bias, the MOS structure creates a "pinch-off" effect resulting in reduced leakage current.

LVFR’s family delivers a significant increase in efficiency, allowing the power supply designer to meet regulatory requirements without the added complexity and cost of offerings, such as synchronous rectification.

ON Semiconductor Power Discrete Division senior director and general manager John Trice said as the customers continuously strive to achieve higher efficiencies in their product designs, older planar generations of Schottky rectifiers simply cannot cost effectively deliver the performance and efficiency of the trench LVFR family.

"LVFR’s superior forward voltage drop and reverse leakage performance over extended temperature ranges exceed our customer’s demanding specifications for power efficiency improvement," said Trice.

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