Nippon Telegraph & Telephone’s Large Scale Integration research laboratory claims it has succeeded in developing a super-high speed Gallium Arsenide circuit using 0.5 micron gate widths, with a gate delay of 0.8nS, three to four times faster than silicon rivals: the 8-bit signal processor is also claimed to be the first Gallium Arsenide part to be fabricated to sub-micron design rules, and consist of 1,426 active elements on a 3.34mm by 2.52mm Gallium Arsenide substrate.
NTT LAB DEVELOPS SUPER-HIGH SPEED GALLIUM ARSENIDE CIRCUIT
