By moving to 1 micron double well CMOS from the 1.2 micron N-well it was using, and shrinking the die size of its 1M memory chip 14.5% to 47 square millimetres, Siemens AG has moved into the premium end of the 1M memory chip market with a part, the HYB 511000A, having an access time of 70nS. The new part is already being produced at a rate of 1m a month at Siemens’ Mega facility in Regensburg, where it has also been sampling 4Ms in June preparatory to volume output in 1989.