US-based IXYS has announced that its Microwave Technology division has introduced a family of three high linearity and RF power amplifier products with output power up to 10 watts based on GaN device technology.
The power amplifiers are MGA-242740-02, MGA-495922-02, and MGA-4959-02, targeted at 802.16d/e WiMax applications and 802.11 WLAN related applications with three frequencies bands, 2.4 to 2.7GHz, 3.3 to 3.8GHz, 4.9 to 5.9GHz, respectively.
All three parts are said to have output power of 10Watt (40dBm) measured at 3dB gain compression point and linear power gain range from 12 to 15dB.
According to the company, the GaN based power amplifies, biased at 28V on drain with quiescent current between 80 to 300mA, are available in various packages including the low cost surface mount 02 packages. The MTBF (mean-Time-Before-Failure) for those GaN based microwave/RF power amplifiers is over 100 years at 85C ambient temperature.
Greg Zhou, general manager of Microwave Technology, said: We will continue to leverage the advantages of the microwave/RF GaN power device technology with high reliability and expand the product family to other applications that demand high linear power and power added efficiency performances including military and high rel applications.
Content from our partners
