The manufacturing node, which is smaller than existing 65-nm processes, promises better performing and more energy efficient memory devices.
Specifically, the 45-nm process would produce chips with more than five times less leakage power than their existing counterparts, Intel said.
This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms, read a company statement.
The chipmaker, the world’s largest, is on track to manufacture the chips in 2007, Intel said.
