The higher density NOR promises read speeds of up to 133 MHz, improved write speeds of up to 1.0MB/sec for faster response times and storage capabilities for 4 mega-pixel cameras and MPEG-4 video. And battery life has been expended with 1.8-volt operation and a power-down mode.
The density of our 1-Gb product provides nearly double the storage for multimedia files and enables ever-slimmer form factor phones, both key elements for our customers, said Darin Billerbeck, general manager of Intel Flash Products Group, in a statement.
While NAND has typically been used as storage in cell phones, Intel’s latest NOR offering has already won designs in new high-end phones.
Sony Ericsson Mobile Communication head of sourcing Peter Carlsson touted Intel’s StrataFlash cellular memory architecture, which resulted in faster time-to-market for our next generation phones, in an Intel press release.
The feature phones business unit of Infineon Technologies was also quoted as a customer for the technology.
The new NOR products were built using 6-nanometer manufacturing process and are drop-in compatible with its existing 90nm-based flash chips.
The Santa Clara, California-based chipmaker also has a 65nm roadmap to support 512Mb, 256Mb and 128Mb densities of its M18 line next year.
