Intel and Micron Technology have introduced a new, finer 20-nanometer (nm) process technology for manufacturing NAND flash memory.
The new 20nm process produces an 8-gigabyte (GB) multi-level cell (MLC) NAND flash device, providing a high-capacity, small form factor storage option for saving data on smartphones, tablets and computing offerings including solid-state drives (SSDs).
The new 20nm 8GB device measures 118mm and enables a 30 to 40% reduction in board space compared to the companies’ existing 25nm 8GB NAND device.
The reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features, said the company.
Micron’s NAND solutions group vice-president Glen Hawk said their innovation and growth opportunities continue with the 20nm NAND process, enabling Micron to deliver cost-effective, value-added solid-state storage offerings for our customers.
Intel non-volatile memory offerings group vice-president and general manager Tom Rampone said NAND gives Intel the ability to provide the highest quality and most cost-effective offerings to their customers, generation after generation.
"The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies," Rampone said.