Chipmaker Intel has started shipping its new solid-state drive (SSD), Solid-State Drive 335 Series which uses 20-nanometer (nm) NAND flash memory process, developed jointly by IM Flash Technologies (IMFT).
The new Solid-State Drive 335 Series (Intel SSD 335 Series) is a 6 gigabit-per-second (Gb/s) SATA drive that comes in a 240 gigabyte (GB) capacity to perform 500 megabytes-per-second (MB/s) sequential reads and 450 MB/s sequential writes.
Intel SSD 335 Series is claimed to help the company to expand its 300 Series client/consumer SSDs to the next-generation technology.
The 20nm IMFT NAND uses a new cell structure that is claimed to enable enhanced cell scaling than conventional architectures.
Utilising a planar cell structure, the 20nm 64Gb NAND overcomes the inherent difficulties that accompany advanced process technology, enabling enhanced performance and reliability compared to previous 25nm generation.
The planar cell structure breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production.
Intel SSD 335 Series measures Random Input/Output (I/O) Operations per Second (IOPS) using 4KB IOPS to read up to 42,000 IOPS and write up to 52,000 IOPS.
The new drive is available in a 2.5-inch form factor, 9.5mm case and is backed by a 3-year limited warranty.
Intel Non-Volatile Memory (NVM) Solutions Group vice president and general manager Rob Crooke said: "The Intel SSD 335 uses Hi-K/metal gate planar cell technology, which overcomes NAND process scaling constraints to deliver the smallest-area NAND cell and die in the industry."
