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December 2, 2011

IBM’s technology to power Micron’s Hybrid Memory Cube

IBM’s new 3-D manufacturing technology would form the foundation for its commercial production

By CBR Staff Writer

Micron Technology has joined hands with IBM to begin production of a memory device using the first commercial CMOS manufacturing technology to employ through-silicon vias (TSVs), according to IBM.

IBM’s advanced TSV chip-making process would enable Micron’s Hybrid Memory Cube (HMC), which would be 15 times faster than those available currently.

IBM’s new 3-D manufacturing technology, used to connect the 3D micro structure, would form the foundation for commercial production of the new memory cube.

HMC parts will be manufactured at IBM’s advanced semiconductor fab in East Fishkill, NY, using the company’s 32nm, high-K metal gate process technology, the company said.

HMC technology will entail using advanced TSVs to combine high-performance logic with Micron’s DRAM. HMC reportedly delivers bandwidth and efficiencies at a pace beyond current device capabilities. Besides, HMC also requires 70% less energy to transfer data while offering a small form factor, which is around 10% of the footprint of conventional memory.

IBM Fellow Subu Iyer said that this was a milestone in the industry move to 3D semiconductor manufacturing. Iyer added," In the next few years, 3D chip technology will make its way into consumer products, and we can expect to see drastic improvements in battery life and functionality of devices."

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