On the memory chip front, IBM scientists are claiming to have fabricated the world’s fastest high-capacity memory chip with a data transfer rate of 8Gbps. The experimental part is a 512K-bit static with a 4nS access time and a 2nS cycle time. It uses IBM’s patented pipelining process, which enables it to overlap read and write operations rather than perform them sequentially. The 0.8 micron CMOS part can generate off-chip bipolar levels so that it can be used with superfast ECL, TTL or CML logic chips. It was developed at Burlington, Vermont. From Japan, Fujitsu Ltd will describe an experimental 64K-bit static fabricated using high electron mobility transistors, claiming it will be four times as fast as conventional statics. It, Toshiba Corp, Hitachi Ltd and Matsushita Electric Industrial Co are all describing their experimental 64-bit dynamic memories.
