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August 25, 1988

HITACHI CLAIMS 1ST FIELD-EFFECT SUPER-CONDUCTING TRANSISTOR

By CBR Staff Writer

Hitachi Ltd claims to have successfully fabricated the world’s first field-effect superconducting transistor, using a 0.1 micron oxide-insulated gate – but it is a little impractical, because the company had to cool the thing to minus 269 o C with liquid Helium: Hitachi says the device then switches in 5pS, as fast as a Josephson Junction; it consists of superconducting Niobium electrodes with a 0.1 micron insulated silicon control electrode, and Hitachi had to develop a new technique to install the Niobium and Oxide gate electrodes on a single-crystalline substrate.

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