FUJITSU HAS HEMT GaAs-GaAlAs HALF MICRON CIRCUIT

Fujitsu Ltd has announced successful design of an experimental GaAs-GaAlAs high electron mobility transistor part for use in multi-bit data registers. The part integrates half micron gates and has a switching speed of 490pS at room temperature. It consists of 1,137 gates and is destined for use in the next generation supercomputers.

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