Fujitsu Semiconductor Europe, which provides advanced systems offerings to the automotive, digital TV, mobile telephony, networking and industrial markets, has launched new SPI ferroelectric random access memory (FRAM) based on its 0.18µm technology.
FRAM combines the advantages of SRAM with non-volatile Flash into one device.
The new SPI FRAM family MB85RSxxx incorporates three devices: MB85RS256A, MB85RS128A and MB85RS64A, which represent three density levels of 256Kbit, 128Kbit and 64Kbit, respectively.
The devices operate at a voltage range between 3 and 3.6V and provide an endurance of 10 billion write/read cycles as well as data retention of 10 years at 55°C.
Operating frequency has been increased to a maximum of 25MHz.
They are well-suited for low power applications, since FRAM products render voltage boosters unnecessary for the writing process.
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The products are offered in 8-pin plastic SOP packages with standard memory pin assignment, which are fully compatible with E2PROM devices.
In addition to the SPI FRAM family, Fujitsu also makes FRAM standalone devices with I²C as well as parallel interfaces with varying density levels from 16Kbit to 4Mbit.
