Elpida Memory and ProMOS Technologies have signed a DRAM foundry agreement under which Elpida will provide DRAM process and product technologies to ProMOS.
In addition, as part of the agreement, ProMOS will also provide certain amount of manufacturing capacity at ProMOS Taichung 300mm wafer fab to Elpida for the manufacturing of Elpida’s 1GB DDR3 device. Trial runs are expected to be completed in the first half of 2010, with mass production following in the second half of the same year.
M L Chen, president and chairman of ProMOS Technologies, said: “Elpida has long been globally recognised as a leader in the development of leading edge DRAM technologies. The synergistic partnership built through this agreement will combine strengths from both companies; Elpida’s 1GB DDR3 device is among the most cost-competitive product in the industry, pairing well with ProMOS’ strength in 300mm manufacturing.
“Through this agreement, ProMOS will be able to rapidly increase its capacity utilisation rate at its Taichung 300mm facilities. With the recent turnaround in the DRAM market, ProMOS has embarked on the road to recovery.”
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