Toshiba has started construction of a fabrication facility (fab), Fab 5, at Yokkaichi Operations, its memory production facility in Mie Prefecture. It has also signed primary agreements with SanDisk, a Milpitas, California based company, for a new joint venture to operate in the Fab 5 facility.
The company said that its fab building will be constructed in two phases, with a ground area of some 38,000m2. The facility will have a quake-absorbing structure, LED lighting, energy-saving manufacturing equipment, and inverter-controlled pumps for semiconductor production equipment that are expected to cut CO2 emissions to a level 12% lower than for Fab 4.
Both the companies said that through joint ventures, including Fab 5, they will make timely investments in NAND Flash memory, and will continue to jointly develop new technologies in order to enhance their competitiveness in the memory business.
Eli Harari, chairman and CEO of SanDisk, said: "Today’s agreement builds on a successful ten-year partnership with Toshiba that has led to the development of eight generations of industry-leading multi-level cell NAND flash memory.
"Customer demand for flash memory continues to grow rapidly, and our investment in Fab 5 will provide us highly cost effective supply, while giving us the flexibility to tailor the rate of capacity expansion to match our demand requirements. Fab 5 represents a strategic commitment to further strengthen our leadership in the fast growing flash markets over the coming decade."
