View all newsletters
Receive our newsletter - data, insights and analysis delivered to you
  1. Technology
  2. Data
May 15, 2014

Toshiba and SanDisk to make high capacity 3D NAND memory chips

Huge gains promised as joint venture commits billions of investment dollars.

By CBR Staff Writer

Japanese company Toshiba has teamed up with SanDisk to manufacture 3D NAND memory chips that can store 50 hours of ultra-high-definition video in a single chip.

As part of the agreement, both the companies will convert a jointly operated 2D NAND facility at Yokkaichi in Mie prefecture of Japan to manufacture the high capacity memory chips from 2016.

Although neither company has disclosed the size of investment, according to Nikkei business daily, they will be investing about $4.9bn in the facility.

Yokkaichi plant will manufacture high capacity memory chips using 3D technology to boost density through layering process, which can store up to 1,000GB of data.

Toshiba Semiconductor & Storage Products president and CEO Yasuo Naruke said the plan to develop advanced technologies is to respond to continued demand of NAND flash memory.

"We are confident that our joint venture with SanDisk will allow us to produce cost competitive next generation memories at Yokkaichi," Naruke said.

In the past couple of years chipmakers have been trying to shrink the size of memory chips to meet increasing demand for high capacity chips that could be used in smartphones and other mobile devices.

Content from our partners
Scan and deliver
GenAI cybersecurity: "A super-human analyst, with a brain the size of a planet."
Cloud, AI, and cyber security – highlights from DTX Manchester

Toshiba, along with Samsung, is currently leading NAND memory chip suppliers and plans to further ramp up investment in memory chips.

SanDisk president and CEO Sanjay Mehrotra said: "We are pleased to continue our long-standing collaboration with Toshiba in this new wafer fab, which will advance our leadership in memory technology into the 3D NAND era."

Toshiba has already developed a 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories, replacing its second generation 19 nm process technology.

In August Samsung commenced production of first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which can store 128GB data, utilising its vertical cell structure based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array.

V-NAND technology is a vertical interconnect process technology, which can stack as many as 24 cell layers vertically, using etching technology that connects the layers electronically by punching holes from the highest layer to the bottom.

Websites in our network
Select and enter your corporate email address Tech Monitor's research, insight and analysis examines the frontiers of digital transformation to help tech leaders navigate the future. Our Changelog newsletter delivers our best work to your inbox every week.
  • CIO
  • CTO
  • CISO
  • CSO
  • CFO
  • CDO
  • CEO
  • Architect Founder
  • MD
  • Director
  • Manager
  • Other
Visit our privacy policy for more information about our services, how Progressive Media Investments may use, process and share your personal data, including information on your rights in respect of your personal data and how you can unsubscribe from future marketing communications. Our services are intended for corporate subscribers and you warrant that the email address submitted is your corporate email address.
THANK YOU