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March 11, 2009

Samsung to produce 8Gb fusion memory chip using 40nm process technology

How does the new chip help application designers?

By CBR Staff Writer

Samsung Electronics, a provider of advanced memory technology, has begun using 40-nanometer process technology to produce an 8Gb Flex-OneNAND fusion memory chip.

According to the company, Flex-OneNAND is a proprietary memory device that provides both SLC and MLC NAND in a single cost-efficient chip. It has been designed for applications that require high speed and high reliability in processing both code and data content.

Samsung has said that Flex-OneNAND incorporates SLC and MLC NAND on a single piece of silicon, allowing application designers to choose the portion of SLC and MLC NAND storage to be used in any particular design through a simple adjustment to the accompanying software. This maximizes the performance and efficiency of the embedded flash chip.

Samsung claims that Flex-OneNAND reduces the area needed for the memory on the printed circuit board and improves performance by diminishing transmission noise.

Jim Elliott, memory vice president of Samsung Semiconductor, said: 40nm Flex-OneNAND is a tremendous advancement for the memory industry, one which offers a uniquely cost-effective approach to memory selection, while permitting designers the flexibility of adjusting designs up to the final design stage.

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