Samsung Electronics has launched a new 8GB OneNAND chip that is based on a single-level-cell (SLC) NAND flash design and utilises 30nm class process technology.
The company claims that the new high-density OneNAND addresses the requirement for more code data storage in smartphones. The 8GB OneNAND features the reliability of a SLC design and the performance of OneNAND, which reads data at 70MB/s, more than four times the speed of conventional NAND.
In addition, by applying advanced 30nm-class process technology, Samsung said that it is able to raise productivity by 40% over its previous 40nm-class design.
OneNAND memory can be used as buffer memory not only for ‘writes’ in the system , but also as a buffer for faster, high-performing ‘read’ operations, Samsung said.
Sejin Kim, vice president of flash memory planning/enabling at Samsung Electronics, said: “We are happy to see that our advanced 30nm-class NAND solution is being widely adopted in smartphones. The availability of an 8GB OneNAND chip will add considerably to our diverse line-up of advanced mobile memory solutions.
“Not only does our new OneNAND nicely address the need for higher density memory in smartphones, but it will enable the addition of many more features, bringing greater customer value, while broadening the scope of the OneNAND market.”
