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March 29, 2010

Samsung develops 40nm 32GB memory module for server applications

Consists of 36 dual-die 40nm-class 4Gb DDR3 chips

By CBR Staff Writer

Samsung Electronics said that it has begun shipping samples of 32GB memory module for server systems, which it claims to be designed for use in advanced servers that require high-density and high-performance features at low-power consumption levels.

The company is using monolithic DDR3 device, a 40-nanometer (nm) class, 4Gb DDR3 chip, as the building block for the new 32GB module.

According to Samsung, the 32GB RDIMM consists of 36 dual-die 40nm-class 4Gb DDR3 chips that can perform at equal or greater levels to a 40nm-based 16GB RDIMM with no increase in power consumption. By equipping a dual CPU, two-way server with 32GB modules, a server system can have up to 384GB of memory, doubling the previously largest density of 192GBs per server.

Samsung claims that by replacing 12 DRAM modules of 16GB density with six 32GB modules would achieve a 192GB total density, allowing the DRAM operating speed in a two-way server system to rise by 33% from 800Mbps to 1,066Mbps, as power is cut by 40%.

Soo-In Cho, president and general manager of Samsung Electronics Memory Division, “Samsung continues to set the pace in advanced memory for high-end server applications by offering 40nm-class 32GB memory modules to reach previously unattainable levels of system capacity.

“In just 10 months, Samsung has now secured the best competitive advantage with the broadest portfolio of 40nm-class DDR3 based memory solutions in the industry since the 40nm-class DRAM was first produced last July.”

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