Samsung has unveiled a new 512GB solid state drive (SSD), which utilises high-performance toggle-mode DDR NAND and 30nm-class 32 gigabit chip.
According to Samsung, the new toggle-mode DDR structure together with the SATA 3.0Gbps interface generates a maximum sequential read speed of 250 Megabyte per second (MBps) and a 220MBps sequential write speed.
In addition, the 512GB SSD is power efficient, enables high-performance levels without any increase in power consumption over a 40nm-class 16Gb NAND-based 256GB SSD, the company claims.
Samsung said that the new 512GB SSD uses reinforced 256bit AES (advanced encryption standard) encryption to ensure security, and provides streamlined boot time and application access. Coupled with Windows 7 TRIM feature the operation management function secures the reliability of the drive in write mode.
Samsung plans to begin volume production of the 512GB SSD in July 2010.
