Samsung Electronics and Toshiba have said that they will develop the most advanced high-performance NAND flash memory technology – a double data rate (DDR) NAND flash memory with a 400 megabit-per-second (Mbps) interface, toggle DDR 2.0 specification.
Both companies said they will support a standard industry specification to enable broad-scale acceptance of this new high-speed technology. The current toggle DDR 1.0 specification applies a DDR interface to conventional single data rate (SDR) NAND architecture. The resulting NAND chip has a 133Mbps interface.
Samsung and Toshiba said that will focus on assuring a 400Mbps interface for the toggle DDR 2.0 specification, which provides a three-fold increase over toggle DDR 1.0, and a ten-fold increase over 40Mbps SDR NAND in widespread use today.
Masaki Momodomi, technical executive of memory product at Toshiba, said: "Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products, and we will continue to make the best effort possible to create standard, high-speed NAND Flash interface solutions with NAND vendors and customers, which will accelerate the revolution in storage applications."
