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February 7, 2010

Micron, Nanya unveil new 2Gb DDR3 memory device

Uses copper-based 42nm DRAM process technology

By CBR Staff Writer

Micron Technology and Nanya have jointly developed a 2Gb DDR3 memory device using their new copper-based 42nm DRAM process technology.

The companies said that the new 2Gb DDR3 device delivers enhanced memory performance capable of reaching up to 1866Mbps by using shrinking process technology. In addition, the small die size coupled with the 2Gb density of the 42nm DDR3 device enables modules up to 16GBs.

Robert Feurle, vice president of DRAM marketing said: With the move to 42nm -and with a 3Xnm process working in our R&D fab in Boise – Micron’s expertise in copper metallisation and proprietary cell capacitor technology has enabled us to stay on the cutting-edge of DRAM process design and innovation.

“The addition of this new 2Gb 42nm device to our DRAM product line strengthens our already rich portfolio of memory solutions for customers’ end applications.

Pei Lin Pai, vice president of global sales and marketing and spokesman for Nanya said: We are very pleased to offer this 2Gb DDR3, the most competitive DRAM device in production, to our customers. Nanya plans to serve the server and PC market, as well as the consumer market, with this latest technology device.

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