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October 12, 2010

ISSI adds new devices to Pseudo SRAM series

Low standby current and power down modes

By CBR Staff Writer

Memory offerings provider Integrated Silicon Solution (ISSI) has added 64Mb and 32Mb densities to its line of Pseudo SRAMs, adding to previously released 4Mb and 8Mb parts.

ISSI said that the new 64Mb is organised as 4Mx16 and 32Mb as 2Mx16, and both features partial array refresh (PAR), low standby current and deep power down (DPD) modes for low power applications.

The IS66WVE2M16ALL/BLL and the IS66WVE4M16ALL/BLL are 1.8V and 3.3V options of asynchronous offering, and IS66WVC2M16ALL, IS66WVD2M16ALL, IS66WVC4M16ALL and the IS66WVD4M16ALL are CRAM 1.5 and CRAM 2.0 options of this product family.

The company said that CRAM 1.5 option adds synchronous / burst interface mode, an on-die temperature sensor for temperature compensated refresh (TCR), and fixed latency.

CRAM 2.0 adds a multiplexed address and data bus for reduced pin count.

ISSI vice president of marketing Ron Kalakuntla said, the new 32Mb and 64Mb densities add to the company’s existing 4Mb and 8Mb densities to provide its customers with a broad PSRAM offering.

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