Elpida Memory, Japan’s supplier of dynamic random access memory (DRAM), has begun sample shipments of a 2-gigabit x32-bit I/O DDR2 SDRAM that operates up to a high speed of 1066Mbps.
The company claims that the new memory device is capable of meeting the need for 1.8V x32-bit and x16-bit I/O as well as low-voltage 1.5V x32-bit and x16-bit I/O. It also reduces by half the number of mounted memory chips, simplifies high-speed memory bus design, conserves chip mounting space and lowers power consumption.
According to Elpida, the new DDR2 SDARM is designed to operate at standard 1.8V and 1.5V, and is expected to meet the need for low-power devices for use in mobile devices. The 50nm CMOS device operates at temperatures of 0 to 95°C.
Volume production is of the new products EDE2116ACBG and EDE2132ACBG are scheduled to begin in the second quarter of CY 2010.