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January 31, 2010

Samsung develops new 30nm DRAM chips

Claims 30nm-class 2Gb DRAM to reduce power consumption by up to 30% over 50nm DRAM

By CBR Staff Writer

Samsung Electronics said that it has completed customer evaluations of its 30-nanometer-class DRAM, in two gigabit (Gb) densities.

The company said that its advancement in process technology will raise productivity and expedite dissemination of high performance 1.5V and 1.35V DDR3 for servers, desktops and notebook PCs.

The 30nm-class process when applied to DDR3 mass production raises productivity by 60% over 40nm-class DDR3, resulting in doubling of production cost-efficiency compared to DRAM produced using 50nm to 60nm-class technology, the company claims.

According to Samsung, the 30nm-class 2Gb, Green DRAM reduces power consumption by up to 30% over 50nm-class DRAM. A 4GB, 30nm module when used in a new-generation notebook will consume only three watts per hour.

Soo-In Cho, president of memory division at Samsung Electronics, said: Our accelerated development of next generation 30nm-class DRAM should keep us in the most competitive position in the memory market.

Our 30nm-class process technology will provide the most advanced low-power DDR3 available today and therein the most efficient DRAM solutions anywhere for the introduction of consumer electronics devices and server systems.

The new DDR3 will be used in a range of products from servers to notebooks, desktops and future versions of netbooks and mobile devices. The 30nm-class DDR3 is scheduled for mass production in the second half of 2010.

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