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November 26, 2015

Samsung 128GB DRAM modules enter mass-production

News: Modules designed for enterprise servers and data centres.

By Vinod

Samsung Electronics has started mass production of the industry’s first 128GB DDR4 modules for enterprise servers and data centres.

The company claims that its new Through Silicon Via (TSV) DRAM module features the largest capacity and the highest energy efficiency of any DRAM modules that are existing in today’s market.

The 128GB TSV registered, dual inline memory module (RDIMM) features 144 DDR4 chips, arranged into 36 4GB DRAM packages.

Each package comprises four 20nm-based 8-gigabit (Gb) chips assembled with TSV packaging technology.

The master chip of each 4GB package embeds the data buffer function for improving module performance and power consumption.

The company said its 128GB TSV DDR4 RDIMM provides a low-power service for next-generation servers with speeds at up to 2,400 Mbps.

Samsung Electronics executive vice president of memory sales and marketing Joo Sun Choi said: "We are pleased that volume production of our high speed, low-power 128GB TSV DRAM module will enable our global IT customers and partners to launch a new generation of enterprise solutions with dramatically improved efficiency and scalability for their investment."

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Samsung plans to offer a complete lineup of its new TSV DRAM modules within the next several weeks including 128GB load reduced DIMMs (LRDIMMs).

In addition, the company plans to introduce TSV DRAM with higher performance, including modules with data transfer speeds of up to 2,667Mbps and 3,200Mbps for enterprise server requirements, as well as TSV applications into high bandwidth memory (HBM) and consumer products.

 

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