AT&T Co’s Bell Laboratories says it has used conventional chip fabrication processes to produce experimental, high-speed devices whose critical dimensions are 0.1 micron: the devices operate at room temperature and use far less energy than current chips and the breakthrough is in the doping process – a patented vertical doping engineering process eliminates current leakage and the need to cool the device; the CMOS devices include functional circuits for frequency dividers, adders, phase-lock loops, analogue-to-digital converters, and low voltage memories, the company added.
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