AT&T Co’s AT&T Microelectronics and Mitsubishi Electric Corp have agreed to work together to develop high performance Gallium Arsenide integrated circuits over the next five years: the two will consider projects to develop GaAs devices for non-military use in wireless products and will consider entering into specific agreements for products that may include joint development, product exchange, private label and mutual second-sourcing; they will also look at exchange of information and joint development in the areas of process, products or design technology to achieve interchangeable designs and compatible processes; AT&T already has a broad-brush chip collaboration with NEC Corp and has been collaborating with Mitsubishi Electric in making 256K statics and in packaging of bipolar parts in Bangkok, Thailand.
Content from our partners
