The agreement adds early-stage research on emerging technologies targeted at 32-nanometer and 22-nanometer silicon generations. It now includes early exploratory research of new transistor, interconnect, lithography and die-to-package connection technologies.
The R&D will take place at IBM’s New York-based Watson Research Center, the recently announced Center for Semiconductor Research at Albany Nanotech and at IBM’s 300-mm fab in East Fishkill, New York.
The agreement marks the first time a tech-development alliance company has worked with IBM’s Research Division on electronic materials and basic feasibility studies three to five years before commercialization. It also becomes one of IBM’s longest running semiconductor alliances.
The two companies began working together in 2003, when they agreed to jointly develop process technologies for 65-nm and 45-nm silicon dimensions. Since then, the alliance has been extended a number of times.
