Advanced Micro Devices Inc has introduced a 90nS 2M-bit Flash memory with automatic program and erase capabilities. It supports AMD’s Embedded Erase and Embedded Program algorithms, both said to simplify the implementation of Flash memory design because designers do not have to write and debug programming routines. Also, the automatic algorithms reduce the system overhead required between the central processing unit and Flash device during program and erase operations. The automatic erase function pre-programs, erases and verifies the device, and the device will indicate when it is ready for reprogramming. The program function also indicates to the system on a byte-by-byte basis when the device is ready for the next byte of data. The new Flash memory is backward-compatible with manual algorithms that have been implemented for existing 1M-bit Flash devices. The Am28F020, available in 120nS, 150nS and 200nS speed grades, is now available in volume production quantities. It is packaged in 32-pin PLCC, PDIP and CDIP packages, and AMD is to introduce the device in a Thin Small Outline Package in the second half of 1991, and a military qualified version will be available in the third quarter. In the PLCC package, the 200nS version costs $26.60 in quantities of 200.
