Samsung has begun mass production of what they claim to be is the world’s fastest DRAM (Dynamic Random Access Memory) package.
Based on a second generation High Bandwidth Memory (HBM2) interface, the 4GB DRAM will be suitable for high performance computing (HPC), enterprise servers and advanced graphics and network systems.
This new HBM module will offer speeds that are more than seven times faster than the current or fastest DRAM performance, allowing for faster responsiveness in high-end computing tasks such as parallel computing, graphics rendering and machine learning.
HBM2 uses Samsung’s 20-nanometer process technology and advanced HBM chip design which is energy efficient, offers high performance and has smaller dimensions, making it suitable for next generation HPC systems and video cards.
The new RAM is produced by stacking a buffer die at the bottom with four 8-gigabit core dies on top. These are then vertically interconnected by TSV holes and microbumps.
As far as bandwidth is concerned, the new DRAM will feature 256 Gbps (Gigabits Per Second), double that of HBM1. In other words, data transmission speeds can be 7 times faster than that of the older generation HBM1.
Samsung Electronics, memory marketing, senior vice president, Sewon Chun said: "By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies.
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"Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market."
Samsung said that by the later part of this year, it will begin producing 8GB HBM2 DRAM. With the introduction of 8GB HBM2 DRAM, Samsung expects that it will be used in graphic cards where space constraint is a major issue.
8GB HBM2 DRAM is claimed to offer space savings of more than 95% compared to GDDR5 DRAM, making them suitable for use in compact devices that require high-level graphics computing capabilities.
Samsung had recently started the mass production of 128GB DDR4 modules for enterprise servers and data centers. These modules use low power and can reach data transfer speeds of up to 2400 Mbps (Megabits Per Second).
