Boise, Idaho-based Micron Quantum Devices Inc has produced engineering samples of its 4M-bit Flash memory in 512K by 8-bit and 256K by 16-bit organisations. These boot-block parts, designed with NOR architecture, are compatible with other NOR architecture parts and have an Electrically Programmable ROM-derived pin-out. The devices operate at speeds as fast as 60nS. Micron Quantum’s Flash devices feature seven erase sub-blocks with a hardware lockable boot block, automated write-erase algorithms, 3.3V or 5V read voltages and 12V programming voltage. They come in two types of surface mount and can be upgraded. Micron Quantum, a subsidiary of Micron Semiconductor Inc, it turn part of Micron Technology Corp, Boise, Idaho, expects to see the parts used in high-speed modems, digital cellular phones, hard disk drives, signal processors and networking applications among other things. The lockable boot block provides a high security memory location for the firmware code, says Micron. Other erase blocks offer flexibility in writing parameter data or updating specific blocks of firmware. The devices are available in Joint Electronic Device Engineering Council standard pin-out in a 512K by 8 organisation – the MT28F004, or a standard pin-out in 256K by 16 or 512K by 8 organisation – MT28F400. Engineering samples can be ordered now, with volume production expected in December. Sample pricing for the MT28F400SG (SOP) at 80nS speeds is $18 in 1,000-piece quantities.
