Samsung Electronics has introduced a new 32 Gigabyte (GB) DDR3 memory module for use in server systems.
The new DDR3 module, which operates at 1.35-volts, is developed based on Samsung’s 50 nanometer (nm)-class 4 Gigabit (Gb) DDR3. The DRAM is expected to improve throughput by 20% over a 1.5V DDR3.
The company reported that the new 32GB registered dual inline memory module (RDIMM) consists of 72 4Gb DDR3 chip dies produced using Samsung’s 50-nanometer class DRAM production technology. A row of nine quad-die package (QDP) 16Gb DDR3s is mounted on each side of the printed circuit board for a collective 32GB.
Jim Elliott, vice president of memory marketing at Samsung Semiconductor said: “Compared to the 8GB memory modules used in today’s servers, our new module packs an eco-sensitive wallop with four times the density at significantly reduced power levels and no increase in the overall footprint. For data centres, it’s a powerhouse in energy efficiency and performance.”
