Hynix Semiconductor has developed a low power high-speed mobile 1Gb DDR2 DRAM using 54nm process technology.
By developing a 50nm-class process, Hynix has overcome the challenge of producing mobile DRAMs with both high speed and low power consumption features.
According to the company, this device is offered at a maximum speed of 1066MHz, and with 32-bit I/O, boasts bandwidth of 4.26Gb/s(Giga byte per second) on a single channel device and 8.52Gb/s on a dual channel.
Hynix has said that its One Chip System design offers the customer flexible options with 2-bit or 4-bit prefetch, and 16 or 32-bit I/O on a single chip. Additionally, Hynix’s new mobile DDR2 is an eco-friendly device since it consumes only 50% of power compared to the previous generation mobile DDR, and 30% compared to standard DDR2 DRAM.
The product complies with the JEDEC standards, and is well suited for next-generation mobile applications such as mobile internet device, NetBooks and high-end smartphones requiring high bandwidth and extended battery life, added Hynix. The product is available in JEDEC standard packages and also in custom packages to meet a wide range of user requirements.
Hynix plans to start mass production of this product in the second half of 2009 to satisfy the increasing demand for high performance mobile applications.
